International Workshop on Nitride Semiconductors 2018 (IWN 2018)
Date: /11/12/13/14/15/16/ November 2018, Kanazawa, Japan, Asia
More Information, Contact: secretary [at] iwn2018.jp
The event will be organized as a combination of four independent workshops. In each workshop, in-depth discussions will be held on a focused aspect of the essential physics and chemistry of some critical issues associated with nitride materials. These scientific activities will contribute to breakthroughs related to critical technological barriers that need to be overcome to improve the performances of nitride devices.
III-nitride crystal growth; III-nitride epitaxy; doping and point defects; nitride alloys and Ga related materials; and growth methods and related technologies
Session chair: Y. Mori (Osaka Univ., Japan)
Optical and electrical properties; structural analysis; defect characterization; nanophotonics and nanoelectronics; and theory and simulation.
Session chair: Y. Yamada (Yamaguchi Univ., Japan)
Visible, UV, and white LEDs; laser diodes; VCSELs; solar cells; photodetectors; intersubband devices; optical devices with nanostructures; and optical device processing and physics.
Session chair: T. Takeuchi (Meijo Univ., Japan)
Transistors, diodes, switches, and amplifiers; power and RF applications; device processing and fabrication; transport and switching properties; novel device concepts; contacts; and reliability.
Session chair: J. Suda (Nagoya Univ., Japan)
Activities in Japan:
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